Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching
نویسندگان
چکیده
منابع مشابه
The form of etch rate minima in wet chemical anisotropic etching of silicon
Etching of monocrystalline silicon in alkaline based solutions leads to a deep minimum in the etch rate crystallographically oriented along 〈111〉. The details of the form of the minimum (angular dependence of the etch rate) are investigated and discussed in a framework of steps originating from spontaneous nucleation and from misorientation of the crystal face exposed to the etchant. As a resul...
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Atomistic simulations of anisotropic wet chemical etching of crystalline silicon have been performed in order to determine the dependence of the etch rates of different crystallographic orientations on surface coverage and clustering of OH radicals. We show that the etch rate is a non-monotonic function of OH coverage and that there always exists a coverage value at which the etch rate reaches ...
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We report a simple, clean, and highly anisotropic hydrogen etching method for chemical vapor deposited (CVD) graphene catalyzed by the copper substrate. By exposing CVD graphene on copper foil to hydrogen flow around 800 °C, we observed that the initially continuous graphene can be etched to have many hexagonal openings. In addition, we found that the etching is temperature dependent. Compared ...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2018
ISSN: 2158-3226
DOI: 10.1063/1.5021721